A light-emitting diode (LED) is a two-lead semiconductor light source. It is a p–n junction diode, which emits light when activated.[4]When a suitable voltage is applied to the leads, electrons are able to recombine with electron holes within the device, releasing energy in the form of photons. This effect is called electroluminescence, and the color of the light (corresponding to the energy of the photon) is determined by the energy band gap of the semiconductor.
An LED is often small in area (less than 1 mm2) and integrated optical components may be used to shape its radiation pattern.[5]
Appearing as practical electronic components in 1962,[6] the earliest LEDs emitted low-intensity infrared light. Infrared LEDs are still frequently used as transmitting elements in remote-control circuits, such as those in remote controls for a wide variety of consumer electronics. The first visible-light LEDs were also of low intensity, and limited to red. Modern LEDs are available across the visible,ultraviolet, and infrared wavelengths, with very high brightness.
Early LEDs were often used as indicator lamps for electronic devices, replacing small incandescent bulbs. They were soon packaged into numeric readouts in the form of seven-segment displays, and were commonly seen in digital clocks.
Recent developments in LEDs permit them to be used in environmental and task lighting. LEDs have many advantages over incandescent light sources including lower energy consumption, longer lifetime, improved physical robustness, smaller size, and faster switching. Light-emitting diodes are now used in applications as diverse as aviation lighting, automotive headlamps, advertising, general lighting, traffic signals, camera flashes and even LED wallpaper. As of 2015, LEDs powerful enough for room lighting remain somewhat more expensive, and require more precise current and heat management, than compact fluorescent lampsources of comparable output.
LEDs have allowed new text, video displays, and sensors to be developed, while their high switching rates are also useful in advanced communications technology.
Type | Passive, optoelectronic |
---|---|
Working principle | Electroluminescence |
Invented | Oleg Losev (1927)[1] James R. Biard (1961)[2] Nick Holonyak (1962)[3] |
First production | October 1962 |
Pin configuration | Anode and cathode |
Electronic symbol | |
Working
A P-N junction can connect the absorbed light energy into its proportional electric current. The same process is reversed here. i.e. the P-N junction emits light when energy is applied on it. This phenomenon is generally called electroluminescence, which can be defined as the emission of light from a semi-conductor under the influence of an electric field. The charge carriers recombine in a forward P-N junction as the electrons cross from the N-region and recombine with the holes existing in the P-region. Free electrons are in the conduction band of energy levels, while holes are in the valence energy band. Thus the energy level of the holes will be lesser than the energy levels of the electrons. Some part of the energy must be dissipated in order to recombine the electrons and the holes. This energy is emitted in the form of heat and light.
The electrons dissipate energy in the form of heat for silicon and germanium diodes. But in Gallium- Arsenide-phosphorus (GaAsP) and Gallium-phosphorus (GaP) semiconductors, the electrons dissipate energy by emitting photons. If the semiconductor is translucent, the junction becomes the source of light as it is emitted, thus becoming a light emitting diode (LED). But when the junction is reverse biased no light will be produced by the LED, and, on the contrary the device may also get damaged.
Colors and materials
Conventional LEDs are made from a variety of inorganic semiconductor materials. The following table shows the available colors with wavelength range, voltage drop and material:
Color | Wavelength [nm] | Voltage drop [ΔV] | Semiconductor material | |
---|---|---|---|---|
Infrared | λ > 760 | ΔV < 1.63 | Gallium arsenide (GaAs) Aluminium gallium arsenide (AlGaAs) | |
Red | 610 < λ < 760 | 1.63 < ΔV < 2.03 | Aluminium gallium arsenide (AlGaAs) Gallium arsenide phosphide (GaAsP) Aluminium gallium indium phosphide (AlGaInP) Gallium(III) phosphide (GaP) | |
Orange | 590 < λ < 610 | 2.03 < ΔV < 2.10 | Gallium arsenide phosphide (GaAsP) Aluminium gallium indium phosphide (AlGaInP) Gallium(III) phosphide (GaP) | |
Yellow | 570 < λ < 590 | 2.10 < ΔV < 2.18 | Gallium arsenide phosphide (GaAsP) Aluminium gallium indium phosphide (AlGaInP) Gallium(III) phosphide (GaP) | |
Green | 500 < λ < 570 | 1.9[72] < ΔV < 4.0 | Traditional green: Gallium(III) phosphide (GaP) Aluminium gallium indium phosphide (AlGaInP) Aluminium gallium phosphide (AlGaP) Pure green: Indium gallium nitride (InGaN) / Gallium(III) nitride (GaN) | |
Blue | 450 < λ < 500 | 2.48 < ΔV < 3.7 | Zinc selenide (ZnSe) Indium gallium nitride (InGaN) Silicon carbide (SiC) as substrate Silicon (Si) as substrate—under development | |
Violet | 400 < λ < 450 | 2.76 < ΔV < 4.0 | Indium gallium nitride (InGaN) | |
Purple | Multiple types | 2.48 < ΔV < 3.7 | Dual blue/red LEDs, blue with red phosphor, or white with purple plastic | |
Ultraviolet | λ < 400 | 3.1 < ΔV < 4.4 | Diamond (235 nm)[73] Boron nitride (215 nm)[74][75] Aluminium nitride (AlN) (210 nm)[76] Aluminium gallium nitride (AlGaN) Aluminium gallium indium nitride (AlGaInN)—down to 210 nm[77] | |
Pink | Multiple types | ΔV ~ 3.3[78] | Blue with one or two phosphor layers: yellow with red, orange or pink phosphor added afterwards, or white phosphors with pink pigment or dye over top.[79] | |
White | Broad spectrum | ΔV = 3.5 | Blue/UV diode with yellow phosphor |
TYPES
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